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HiPerFET TM
V DSS
I D25
R DS(on)
Power MOSFETs
IXFH/IXFM 15 N60
IXFH/IXFM 20 N60
600 V
600 V
15 A
20 A
0.50 W
0.35 W
N-Channel Enhancement Mode
High dv/dt, Low t rr , HDMOS TM Family
t rr ￡ 250 ns
Symbol
Test Conditions
Maximum Ratings
TO-247 AD (IXFH)
V DSS
V DGR
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GS = 1 M W
600
600
V
V
V GS
V GSM
Continuous
Transient
± 20
± 30
V
V
(TAB)
I D25
I DM
T C = 25 ° C
T C = 25 ° C, pulse width limited by T JM
15N60
20N60
15N60
15
20
60
A
A
A
TO-204 AE (IXFM)
20N60
80
A
I AR
T C = 25 ° C
15N60
20N60
15
20
A
A
E AR
T C = 25 ° C
30
mJ
D
G
dv/dt
P D
I S ￡ I DM , di/dt ￡ 100 A/ m s, V DD ￡ V DSS ,
T J ￡ 150 ° C, R G = 2 W
T C = 25 ° C
5
300
V/ns
W
G = Gate,
S = Source,
D = Drain,
TAB = Drain
T J
T JM
T stg
-55 ... +150
150
-55 ... +150
° C
° C
° C
Features
? International standard packages
? Low R DS (on) HDMOS TM process
? Rugged polysilicon gate cell structure
T L
M d
Weight
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
300 ° C
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
? Unclamped Inductive Switching (UIS)
rated
? Low package inductance
- easy to drive and to protect
? Fast intrinsic Rectifier
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
Applications
? DC-DC converters
? Synchronous rectification
? Battery chargers
V DSS
V GS = 0 V, I D = 250 m A
600
V
? Switched-mode and resonant-mode
power supplies
V GS(th)
I GSS
I DSS
V DS = V GS , I D = 4 mA
V GS = ± 20 V DC , V DS = 0
V DS = 0.8 ? V DSS
V GS = 0 V
T J = 25 ° C
T J = 125 ° C
2.0
4.5
± 100
250
1
V
nA
m A
mA
? DC choppers
? AC motor control
? Temperature and lighting controls
? Low voltage relays
Advantages
V GS = 10 V, I D = 0.5 ? I D25
R DS(on)
15N60
20N60
Pulse test, t ￡ 300 m s, duty cycle d ￡ 2 %
0.50
0.35
W
W
? Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
? Space savings
? High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
? 2000 IXYS All rights reserved
91526E (4/99)
1-4
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